Correlation of Electrical and Optical Properties of Cadmium Germanium Arsenide
For p-type samples doped with Fe, Al, Ga, and Cu, the hole concentrations vary from 1015 cm-3 to 1018 cm -3 at room temperature and the both shallow and deep acceptors are present. The potential fluctuation Gamma model is used to predict shifts in energy of the near-band-edge photoluminescence transition.constant value of Eg = 0.57 eV. The long ... 2.9 Hole concentration vs. temperature for acceptor activation energies of Ea = 0.085eV (black curve), 0.12 eV (red curve), and 0.30 eV (blue curve). ... 4.4 Vacuum System Diagram (from MMR useranbsp;...
| Title | : | Correlation of Electrical and Optical Properties of Cadmium Germanium Arsenide |
| Author | : | Chunchuan Xu |
| Publisher | : | ProQuest - 2007 |
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